Epi Specs-UV-CHIPS Standard GaN|SiC epi specs
4英寸氮化镓外延片|碳化硅外延片 HEMT外延片产品
| Epi structure | Epi spec |
| Substrate Thickness （µm） | 500 ±25 |
| Epi Thickness （µm） | 1.8 to 2.0μm or upon customers’ request |
| XRD Rocking Curve | (002) ≤ 200 arcsec (102) ≤ 250 arcsec |
| Epi Sheet Resistance （Rsh)* | 350±35 Ω/sq or upon customers’ request |
| Epi Sheet Resistance uniformity** | Rsh Stdev. ≤2% |
| Ns（cm-2）*** | 0.8 ~ 1.1 X1013 or upon customer request |
Electron Mobility（cm2V-1s-1)**** | ≥2000 |
| Epi Surface Roughness （rms) | ≤0.5nm |
Epi Total Thickness Variation (TTV) | ≤10μm |
| Wafer Wrap, Bow | ≤30μm |
| In-situ SiNx | Available upon customer request |
| Wafer Edge Exclusion | ≤3mm |
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